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Abstract

Organic semiconductors (OSCs) are important active materials for the fabrication of next-generation organic-based electronics. However, the development of n-type OSCs lags behind that of p-type OSCs in terms of charge-carrier mobility and environmental stability. This is due to the absence of molecular designs that satisfy the requirements. The present study describes the design and synthesis of n-type OSCs based on challenging molecular features involving a π-electron core containing electronegative N atoms and substituents. The unique π-electron system simultaneously reinforces both electronic and structural interactions. The current n-type OSCs exhibit high electron mobilities with high reliability, atmospheric stability, and robustness against environmental and heat stresses and are superior to other existing n-type OSCs. This molecular design represents a rational strategy for the development of high-end organic-based electronics.

Paper

Title: Robust, high-performance n-type organic semiconductors
Publication: Science Advances

Author: Toshihiro Okamoto*, Shohei Kumagai, Eiji Fukuzaki, Hiroyuki Ishii, Go Watanabe, Naoyuki Niitsu, Tatsuro Annaka, Masakazu Yamagishi,

             Yukio Tani, Hiroki Sugiura, Tetsuya Watanabe, Shun Watanabe, and Jun Takeya
DOI: 10.1126/sciadv.aaz0632
Date: 1 May 2020