| Career Summary |
1989: Diploma Physicist, Department of Physics, Tartu University, Estonia
1994: Licentiate of Technology, Department of Technical Physics, Helsinki University of Technology, Finland
1995: Doctor of Technology, Department of Technical Physics, Helsinki University of Technology, Finland
1995: Research scientist, Helsinki University of Technology, Finland
1997: Research associate, Tokyo Institute of Technology, Japan
1999: Research fellow, National Institute for Materials Science, Japan
2001: Associate professor, Institute for Solid state Physics, University of Tokyo, Japan
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| Educational Activities |
Graduate school: Physics of Transition Metal Oxides
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| Research Activities |
Growth of thin oxide films by Laser Molecular Beam Epitaxy
Fabrication of oxide-based field-effect devices
Studying electronic phase transitions in oxide heterostructures
Defect structure of oxide thin films
Materials informatics
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Literature
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| Other Activities |
Materials Research Society (MRS)
Japan Societ of Applied Physics (JSAP)
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| Future Plan |
We continue our work on controlling the electronic structure at oxide heterointerface.
The purpose is to use field-effect carrier density modulation to drive phase transitions in oxides. This would allow us to study the effects of impurities and localization phenomena
on the physical properties of various transition metal oxides.
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| Messages to Students |
Oxides are at the forefront of developing new materials for new electronic applications.
Examples where novel oxides are used already include faster logic, larger memories, and new non-volatile memory architectures. Oxides are conceptually simple, yet
very coplex systems from the point of view of solid state physics. there are many basic
issues that need to be solved and understood before we can see true applications
of 'oxide electronics'. Join our lab if you want to work on new materials, with an
eye on heterostructures and actual applications.
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