Lippmaa group
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TEL: +81-(0)4-7136-3316 FAX: +81-(0)4-7136-3319
e-mail: mlippmaa@issp.u-tokyo.ac.jp |
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| We study the growth mechanism and physical properties of transition metal oxides in restricted geometries. We typically grow and study zero-, one- or two-dimensional oxide structures, i.e. nanodots, nanowires, and very thin films that are only a few atomic layers thick. Our aim is to understand the growth mechanism of such heteroepitaxial structures and to study the physical properties of oxide nanostructures. We use laser molecular beam epitaxy for growing oxide nanostructures and characterize their properties by various forms of scanning probe, transport, optical, and magnetic measurements. The work also involves the design and fabrication of device structures, such as field-effect transistors, for characterizing the transport and dielectric properties of thin oxide films. 
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